2SC5110 2003-03-24 1 toshiba transistor silicon npn epitaxial planar type 2SC5110 for vco application maximum ratings (ta 25c) characteristics symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 10 v emitter-base voltage v ebo 3 v base current i b 30 ma collector current i c 60 ma collector power dissipation p c 100 mw junction temperature t j 125 c storage temperature range t stg 55~125 c electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb 10 v, i e 0 0.1 a emitter cut-off current i ebo v eb 1 v, i c 0 0.1 a dc current gain h fe (note 1) v ce 5 v, i c 5 ma 80 240 transition frequency f t v ce 5 v, i c 5 ma 4 6 ghz insertion gain s 21e 2 v ce 5 v, i c 5 ma, f 1 ghz 7 11 db output capacitance c ob 0.7 pf reverse transfer capacitance c re v cb 5 v, i e 0, f 1 mhz (note 2) 0.5 0.9 pf collector-base time constant c c ? rbb? v cb 5 v, i c 3 ma, f 30 mhz 5.5 10 ps note 1: h fe classification o: 80~160, y: 120~240 note 2: c re is measured by 3 terminal method with capacitance bridge. unit: mm jedec D jeita sc-70 toshiba 2-2e1a weight: 0.006 g (typ.)
2SC5110 2003-03-24 2 marking
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2SC5110 2003-03-24 4 s-parameter z o 50 , ta 25c v ce 5 v, i c 5 ma frequency s11 s21 s12 s22 (mhz) mag. ang. mag. ang. mag. ang. mag. ang. 200 0.631 67.7 9.526 129.8 0.062 55.9 0.687 38.7 400 0.441 111.7 6.393 106.3 0.084 49.5 0.459 48.5 600 0.363 139.8 4.611 93.6 0.100 50.6 0.360 50.6 800 0.338 159.8 3.599 84.6 0.117 52.9 0.312 51.1 1000 0.331 175.0 2.990 77.5 0.134 55.1 0.286 51.6 1200 0.337 171.9 2.556 71.2 0.152 57.2 0.271 53.0 1400 0.344 161.7 2.252 65.3 0.174 58.6 0.265 55.7 1600 0.359 152.1 2.011 60.3 0.196 58.5 0.259 59.5 1800 0.373 144.6 1.845 55.4 0.217 57.9 0.254 63.6 2000 0.391 138.5 1.691 50.8 0.238 58.3 0.249 68.8
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2SC5110 2003-03-24 6 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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